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  m c l 4 1 4 8 small signal switching diode features maximum ratings and electrical characteristics electrical characteristics (ratings at 25 c ambient temperature unless otherwise specified) (ratings at 25 c ambient temperature unless otherwise specified) dc blocking voltage v r v olts v olts ma ma c c mw v rm i a v i fsm p tot t j t stg non-repetitive peak reverse voltage 75 100 power dissipation at t a =25 c junction temperature storage temperature range non-repetitive peack forward surge current @t=1.0s a verage rectified current, half wave rectification with resistive load at t a =25 c and f 50hz mechanical data case : micromelf glass case w eight : approx. 0.03gram forward voltage at if=50ma v f r ja v olts v olts na k/w na na pf i r i r i r c j t rr leakage current at v r =20v at v r =75v at v r =20v , t j =150 c 1 25 5 50 4 reverse recovery time from i f =10ma to i r =1ma, v r =6v , r l =100 w junction capacitance at v r =v f =0v thermal resistance junction to ambient rectification ef ficiency at f=100mhz, v rf =2v 0.45 micromelf dimensions in inches and (millimeters) 0 . 0 7 9 ( 2 . 0 ) 0 . 0 7 1 ( 1 . 8 ) 0 . 0 5 1 ( 1 . 3 0 ) 0 . 0 4 7 ( 1 . 2 0 ) symbol units v alue symbol units max t yp. min. -65 to +175 175 500 500 150 500 4 v oltage rise when switching on tested with 50ma pulse t p =0.1 m s, rise time<30 m s, f p =5 to 100khz v fr 2.5 silicon epitaxial planar diode sod-523 case with the type designation 1n4148wt . type designation ll4148, the sod-123 case with the type designation case with the type designation 1n4148, the minimelf case with the 1n4148w , the sod-323 case with the type designation 1n4148ws, the 500mw power dissipation fast switching diode this diode is also available in other case styles including: the do-35 0.026(0.48) 0.016(0.28) ns xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 1
2 fig 1-forward characteristics fig 3-admissible power dissipation versus ambient temperature fig 2: dynamic forward resistance versus forward current fig. 4-relative capacitance versus voltage 0 10 0 0 0 100 8 6 4 2 200 c 10v 100 0.7 200 300 0.9 400 500 1.1 600 700 1.3 800 900 1.5 1000 10 1 10 10 10 1 10 10 10 10 1 1 10 10 10 10 -2 -1 2 2 3 4 2v -2 2 3 -1 v f t a v r r f i f p tot c j (vr) c j (0v) i f ma mw ma t j= 100 c t j= 25 c t j= 25 c f=1khz t j= 25 c f=1mhz w m c l 4 1 4 8 small signal switching diode xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017
3 fig 6: leakage current versus junction temperature fig.5 rectification efficiency measurement circuit fig 7: admissible repetitive peak forward current versus pulse duration 10 10 10 10 1 0.1 1 10 v=0 0.1 0.2 0.5 100 10s 10 -4 - 3 - 2 - 1 -5 i frm tp a v o 5k w 60 w 2nf v rf =2v d.u.t . t i v=tp/t t=1/fp i frm tp 1 10 10 10 10 2 3 4 na v r =20v 0 100 200 c 2 5 2 5 2 5 2 5 i r t j m c l 4 1 4 8 small signal switching diode xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017


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